advanced power p-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss -60v simple drive requirement r ds(on) 25m fast switching characteristic i d -45a halogen free & rohs compliant product description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg o c t j o c symbol value units rthj-c maximum thermal resistance, junction-case 1.4 o c/w rthj-a maximum thermal resistance, junction-ambient 110 o c/w data and specifications subject to change without notice continuous drain current, v gs @ 10v -28.7 total power dissipation 1.1 pulsed drain current 1 -160 total power dissipation 89.3 gate-source voltage + 20 continuous drain current, v gs @ 10v -45 AP9579GJ-HF rating halogen-free product -55 to 150 -60 201101211 parameter 1 operating junction temperature range storage temperature range -55 to 150 thermal data parameter drain-source voltage g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-251 package is widely preferred for all commercial-industrial through-hole applications and suited for low voltage applications such as dc/dc converters. g d s to-251(j)
AP9579GJ-HF electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -60 - - v v gs =-10v, i d =-20a - - 25 m ? v gs =-4.5v, i d =-15a - - 30 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-20a - 36 - s i dss drain-source leakage current v ds =-48v, v gs =0v - - -25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =-20a - 45 72 nc q gs gate-source charge v ds =-48v - 7.5 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 26 - nc t d(on) turn-on delay time 2 v ds =-30v - 12 - ns t r rise time i d =-20a - 38 - ns t d(off) turn-off delay time r g =3.3 -70- ns t f fall time v gs =-10v - 94 - ns c iss input capacitance v gs =0v - 3600 5760 pf c oss output capacitance v ds =-25v - 375 - pf c rss reverse transfer capacitance f=1.0mhz - 270 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-20a, v gs =0v - - -1.3 v t rr reverse recovery time 2 i s =-20a, v gs =0v, - 43 - ns q rr reverse recovery charge di/dt=-100a/s - 63 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 r ds(on) static drain-source on-resistance 2
AP9579GJ-HF fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 17 19 21 23 25 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -15 a t c =25 o c 0 40 80 120 160 0481216 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -7.0v -6.0v -5.0v v g = -4.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -20a v g = -10v 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 0 20 40 60 80 100 024681012 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -10v -7.0v -6.0v -5.0v v g = -4.0v
AP9579GJ-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 0 20406080 q g , total gate charge (nc) -v gs , gate to source voltage (v) v ds = -48v i d = -20a 0 1000 2000 3000 4000 5000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 10us 100us 1ms 10ms 100ms dc t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on)
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